The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Dec. 14, 2018
Applicant:

University of Rhode Island Board of Trustees, Kingston, RI (US);

Inventors:

Otto J. Gregory, Narragansett, RI (US);

Kevin Rivera, Providence, RI (US);

Matthew Thomas Ricci, Greenwich, RI (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/22 (2006.01); C04B 35/83 (2006.01); G01K 7/08 (2006.01); G01K 7/02 (2006.01); C04B 41/91 (2006.01); C04B 41/45 (2006.01); C04B 41/50 (2006.01); C04B 35/80 (2006.01);
U.S. Cl.
CPC ...
G01K 7/226 (2013.01); C04B 35/806 (2013.01); C04B 35/83 (2013.01); C04B 41/4515 (2013.01); C04B 41/4592 (2013.01); C04B 41/505 (2013.01); C04B 41/5062 (2013.01); C04B 41/91 (2013.01); G01K 7/028 (2013.01); G01K 7/08 (2013.01); C04B 2235/386 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/422 (2013.01); C04B 2235/5244 (2013.01); C04B 2235/5248 (2013.01); C04B 2235/5268 (2013.01);
Abstract

A resistance temperature detector (RTD) that uses a ceramic matrix composite (CMC), such as a silicon carbide fiber-reinforced silicon carbide matrix, as an active temperature sensing element, which can operate at temperatures greater than 1000° C. or even 1600° C. Conductive indium tin oxide or a single elemental metal such as platinum is deposited on a dielectric or insulating layer such as mullite or an environmental barrier coating (EBC) on the substrate. Openings in the layer allow etching of the CMC surface in order to make high quality ohmic contacts with the conductive material, either directly or through a silicide diffusion barrier such as ITO. The RTD can measure both temperature and strain of the CMC. The use of an EBC, which typically is deposited on the CMC by the manufacturer, as the insulating or dielectric layer can be extended to other devices such as strain gages and thermocouples that use the CMC as a sensing element. The EBC can be masked and etched to form the openings. A conductive EBC can be used as the silicide diffusion barrier.


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