The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Mar. 28, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Rolf Weis, Dresden, DE;
Marko Lemke, Dresden, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01M 10/04 (2006.01); H01M 10/0562 (2010.01); H01M 4/04 (2006.01); H01M 4/131 (2010.01); H01M 4/133 (2010.01); H01M 4/134 (2010.01); H01M 4/1391 (2010.01); H01M 4/1393 (2010.01); H01M 4/1395 (2010.01); H01M 4/38 (2006.01); H01M 4/525 (2010.01); H01M 4/587 (2010.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 10/04 (2013.01); H01M 4/0492 (2013.01); H01M 4/131 (2013.01); H01M 4/133 (2013.01); H01M 4/134 (2013.01); H01M 4/1391 (2013.01); H01M 4/1393 (2013.01); H01M 4/1395 (2013.01); H01M 4/386 (2013.01); H01M 4/525 (2013.01); H01M 4/587 (2013.01); H01M 10/0525 (2013.01); H01M 10/0562 (2013.01); H01M 2004/021 (2013.01); H01M 2010/0495 (2013.01); H01M 2300/0068 (2013.01); Y02E 60/122 (2013.01); Y02T 10/7011 (2013.01);
Abstract
A method for forming a battery element includes etching trenches into a substrate and crystal orientation dependent etching of the trenches. Further, the method includes forming solid state battery structures within the trenches.