The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Sep. 07, 2018
Applicant:

Tes Co., Ltd, Yongin, Gyeonggi-do, KR;

Inventors:

Hong-Jae Lee, Gyeonggi-do, KR;

Jong-Hwan Kim, Chungcheongnam-do, KR;

Woo-Pil Shim, Gyeonggi-do, KR;

Woo-Jin Lee, Busan, KR;

Sung-Yean Yoon, Gyeonggi-do, KR;

Don-Hee Lee, Gyeonggi-do, KR;

Assignee:

TES CO., LTD, Yongin, Gyeonggi-do, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/56 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 51/56 (2013.01); H01L 51/5237 (2013.01); H01L 51/5253 (2013.01); H01L 2251/301 (2013.01); H01L 2251/558 (2013.01);
Abstract

The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.


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