The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Feb. 13, 2019
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Dong Yean Oh, Gyeonggi-do, KR;
Chang Soo Woo, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/144 (2013.01); H01L 45/147 (2013.01); H01L 45/1675 (2013.01);
Abstract
A semiconductor integrated circuit device and a fabrication method thereof are disclosed. The resistive memory device includes a lower electrode, a resistive layer formed in a resistance change region on the lower electrode, an upper electrode formed on the resistive layer, and an insertion layer configured to allow a reset current path of the resistive layer, which is formed from the upper electrode to the lower electrode, to be bypassed in a direction perpendicular to or parallel to a surface of the lower electrode.