The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Aug. 29, 2018
Applicant:
Nichia Corporation, Anan-shi, Tokushima, JP;
Inventor:
Masatsugu Ichikawa, Anan, JP;
Assignee:
NICHIA CORPORATION, Anan-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/58 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/60 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/005 (2013.01); H01L 33/10 (2013.01); H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01L 33/507 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01);
Abstract
Provided is a semiconductor light emitting deviceincludes a semiconductor stacked layerhaving a light extraction surfaceperpendicular to a stacked surface of the semiconductor stacked layer, a light transmissive light guide memberdisposed on the semiconductor stacked layer, a light reflective memberdisposed on the light guide member, and a light reflective packagewhich has an open portion corresponding to the light extraction surfaceand surrounds peripheral surfaces of the semiconductor stacked layer