The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Dec. 12, 2017
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Fabian Kopp, Penang, MY;

Attila Molnar, Gelugor, MY;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/007 (2013.01); H01L 33/46 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

An optoelectronic semiconductor chip includes a semiconductor layer sequence, a transparent substrate, at least one contact trench, at least one insulating trench, at least one current distribution trench, at least in the insulating trench, an electrically insulating mirror layer that reflects radiation generated in an active layer, at least one metallic current web in the contact trench configured for a current conduction along the contact trench and supplying current to a first semiconductor region, and at least one metallic busbar in the current distribution trench that energizes a second semiconductor region, wherein the contact trench, the isolating trench and the current distribution trench extend from a side of the second semiconductor region facing away from the substrate through the active layer into the first semiconductor region, and the contact trench is completely surrounded by the insulating trench, and the current distribution trench lies only outside the insulating trench.


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