The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Feb. 22, 2019
Applicant:

Artilux, Inc., Menlo Park, CA (US);

Inventors:

Szu-Lin Cheng, Hsinchu, TW;

Chien-Yu Chen, Zhubei, TW;

Shu-Lu Chen, Zhubei, TW;

Yun-Chung Na, Hsinchu, TW;

Ming-Jay Yang, Zhubei, TW;

Han-Din Liu, Sunnyvale, CA (US);

Che-Fu Liang, Zhubei, TW;

Assignee:

Artilux, Inc., Menlo Park, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01); H01L 31/107 (2006.01); H01L 31/0745 (2012.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02024 (2013.01); H01L 31/0284 (2013.01); H01L 31/035254 (2013.01); H01L 31/0745 (2013.01); H01L 31/1075 (2013.01); H01L 31/1812 (2013.01); H01L 27/15 (2013.01);
Abstract

A photo-detecting apparatus includes a semiconductor substrate. A first germanium-based light absorption material is supported by the semiconductor substrate and configured to absorb a first optical signal having a first wavelength greater than 800 nm. A first metal line is electrically coupled to a first region of the first germanium-based light absorption material. A second metal line is electrically coupled to a second region of the first germanium-based light absorption material. The first region is un-doped or doped with a first type of dopants. The second region is doped with a second type of dopants. The first metal line is configured to control an amount of a first type of photo-generated carriers generated inside the first germanium-based light absorption material to be collected by the second region.


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