The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
May. 31, 2019
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
David Sheridan, Greensboro, NC (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device includes a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The HEMT GaN bidirectional blocking device further includes a first source/drain electrode and a second source/drain electrode disposed on two opposite sides of a gate electrode disposed on top of said hetero-junction structure for controlling a current flow between the first and second source/drain electrodes in the 2DEG layer wherein the gate electrode is disposed at a first distance from the first source/drain electrode and a second distance from the second source/drain electrode and the first distance is different from the second distance.