The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Sep. 21, 2018
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Katsunori Hirota, Yamato, JP;
Keiichi Sasaki, Yokohama, JP;
Tsutomu Tange, Yokohama, JP;
Yoshiei Tanaka, Hachioji, JP;
Akira Ohtani, Ebina, JP;
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/103 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14629 (2013.01); H01L 27/1462 (2013.01); H01L 27/14612 (2013.01); H01L 27/14627 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01); H01L 29/2003 (2013.01); H01L 29/42376 (2013.01); H01L 29/518 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/7833 (2013.01); H01L 31/103 (2013.01);
Abstract
An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.