The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Aug. 13, 2018
Boe Technology Group Co., Ltd., Beijing, CN;
Peking University, Beijing, CN;
Hu Meng, Beijing, CN;
Xuelei Liang, Beijing, CN;
Jiye Xia, Beijing, CN;
Boyuan Tian, Beijing, CN;
Guodong Dong, Beijing, CN;
Qi Huang, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.