The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
May. 06, 2019
Renesas Electronics Corporation, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
The manufacturing method of the semiconductor device includes a step of forming the gate dielectric film GIand the polysilicon layer PSon the main surface SUBa of the semiconductor substrate SUB, a step of forming the isolation trench TR in the semiconductor substrate SUB through the polysilicon layer PSand the gate dielectric film GIa step of filling the isolation trench TR with the dielectric film, and then a step of polishing the dielectric film to form the element isolation film STI in the isolation trench TR. Further, a method for manufacturing a semiconductor device comprises etching the element isolation film STI to retract the upper surface STIa of the element isolation film STI, then further depositing a polysilicon layer on the polysilicon layer PSto form a gate electrode using an anisotropic dry etching method.