The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Jun. 25, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Euntaek Jung, Seongnam-si, KR;

Joongshik Shin, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11575 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01); H01L 27/11573 (2017.01); H01L 27/11526 (2017.01); H01L 27/11519 (2017.01); H01L 27/11548 (2017.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11526 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 27/11548 (2013.01); H01L 29/1037 (2013.01); H01L 29/4236 (2013.01);
Abstract

Three-dimensional semiconductor memory devices and methods of fabricating the same are provided. A memory device may include a semiconductor layer including first and second regions, first vertical structures on the first region and extending in a first direction perpendicular to a top surface of the semiconductor layer, and second vertical structures on the second region and extending in the first direction. The first vertical structure may include a vertical semiconductor pattern extending in the first direction and in contact with the semiconductor layer, and a first data storage pattern surrounding the vertical semiconductor pattern. The second vertical structure may include an insulation structure extending in the first direction and in contact with the semiconductor layer, and a second data storage pattern surrounding the insulation structure.


Find Patent Forward Citations

Loading…