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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10777553 B1

PDFFull Text
Date of Patent:
Sep. 15, 2020

Filed:

Mar. 25, 2019

Integrated circuit device and method of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jung-hyuck Choi, Seoul, KR;

Hae-wang Lee, Yongin-si, KR;

Hyoun-jee Ha, Hwaseong-si, KR;

Chul-hong Park, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Farun Lu

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 23/528 (2006.01); H01L 29/08 (2006.01); H01L 23/535 (2006.01); H01L 23/522 (2006.01); H01L 29/45 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 29/417 (2006.01); H01L 27/092 (2006.01); H03K 19/0944 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/762 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/665 (2013.01); H03K 19/0944 (2013.01);
Abstract

An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.

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