logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10777545 B1

PDFFull Text
Date of Patent:
Sep. 15, 2020

Filed:

Apr. 08, 2019

Semiconductor device

Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Akira Yamada, Kariya, JP;

Shinya Sakurai, Kariya, JP;

Takashi Nakano, Kariya, JP;

Yosuke Kondo, Kariya, JP;

Mutsuya Motojima, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Edward Chin

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 21/8222 (2006.01); H01L 27/08 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 27/04 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 21/822 (2013.01); H01L 21/8222 (2013.01); H01L 21/8234 (2013.01); H01L 27/0277 (2013.01); H01L 27/04 (2013.01); H01L 27/06 (2013.01); H01L 27/08 (2013.01); H01L 27/088 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/7818 (2013.01); H01L 29/0653 (2013.01); H01L 29/7835 (2013.01);
Abstract

A semiconductor device configures a protection element that protects a protection target element connected between a cathode electrode and an anode electrode when a parasitic transistor configured by a cathode region, a first conductivity type well layer, and a second conductivity type well is turned on and electrical continuity is established between the cathode electrode and the anode electrode. The semiconductor device includes a plurality of body regions in one cell of the protection element, and the plurality of body regions is brought in contact with the cathode electrode.

Find Patent Forward Citations

Loading…