The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Jan. 08, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Sang-Shin Jang, Gwangyang-si, KR;
Woo-Kyung You, Hwaseong-si, KR;
Kyu-Hee Han, Hwaseong-si, KR;
Jong-Min Baek, Seoul, KR;
Viet Ha Nguyen, Yongin-si, KR;
Byung-Hee Kim, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.