The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Feb. 02, 2018
Applicant:
University of South Carolina, Columbia, SC (US);
Inventors:
Ifat Jahangir, Hillsboro, OR (US);
Goutam Koley, Anderson, SC (US);
MVS Chandrashekhar, Columbia, SC (US);
Assignee:
University of South Carolina, Columbia, SC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/24 (2006.01); H01L 21/768 (2006.01); H01L 21/324 (2006.01); H01L 21/263 (2006.01); H01L 29/739 (2006.01); H01L 29/786 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); H01L 21/0242 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02614 (2013.01); H01L 21/2636 (2013.01); H01L 21/324 (2013.01); H01L 21/76895 (2013.01); H01L 29/24 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7391 (2013.01); H01L 29/778 (2013.01); H01L 29/7839 (2013.01); H01L 29/78681 (2013.01);
Abstract
Methods of synthesis and fabrication of a transition metal dichalcogenide (TMD) structures are disclosed. A method can include first patterning a transition metal (TM) on a substrate and placing the substrate in a process chamber. Oxygen can be applied to the transition metal on the substrate and a mixture of highly reactive transition metal oxides can be formed and simultaneously thinned down by sublimation. Finally, a chalcogen can be applied to the substrate and a transition metal dichalcogenide structure can be formed.