The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Dec. 08, 2016
Applicant:
University of Houston System, Houston, TX (US);
Inventors:
Assignee:
University of Houston System, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02425 (2013.01); H01L 21/02488 (2013.01); H01L 21/02505 (2013.01); H01L 21/02532 (2013.01); H01L 29/16 (2013.01);
Abstract
A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm/Vs and carrier concentration of the epitaxial doped layer is less than 10cm.