The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Apr. 08, 2019
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Tomonori Sasaki, Tokyo, JP;

Tatsuya Saito, Tokyo, JP;

Hideshi Maeno, Tokyo, JP;

Takeshi Ueki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/26 (2006.01); G11C 29/56 (2006.01); G01R 31/3185 (2006.01); G11C 29/18 (2006.01);
U.S. Cl.
CPC ...
G11C 29/26 (2013.01); G01R 31/318597 (2013.01); G11C 29/56004 (2013.01); G11C 2029/1806 (2013.01); G11C 2029/5602 (2013.01);
Abstract

To overcome a problem of increase of test time related to BIST in a conventional semiconductor device, a semiconductor device according to one embodiment includes a plurality of memory arrays having different sizes, a test pattern generation circuit that outputs a test pattern for the memory arrays, and a memory interface circuit that is provided for every memory array and converts an access address. The memory interface circuit shifts a test address output from the test pattern generation circuit in accordance with a shift amount set for every memory array, thereby converting the test address to an actual address of a memory array to be tested.


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