The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Oct. 01, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang-Wan Nam, Hwaseong-si, KR;

Euihyun Cheon, Suwon-si, KR;

Byungjun Min, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 16/16 (2006.01); G11C 7/18 (2006.01); G11C 16/30 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); G11C 7/18 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01); G11C 16/30 (2013.01);
Abstract

A nonvolatile memory device includes a first memory block including a plurality of cell transistors interconnected with a plurality of ground selection lines, a plurality of word lines, and a plurality of string selection lines, which are stacked in a direction perpendicular to a substrate, a block selecting circuit that is connected with the plurality of ground selection lines, the plurality of word lines, and the plurality of string selection lines, and provides corresponding driving voltages to the plurality of ground selection lines, the plurality of word lines, and the plurality of string selection lines in response to a block selection signal, respectively, and a block unselecting circuit that is connected only with specific string selection lines of the plurality of string selection lines, and provides an off-voltage only to the specific string selection lines in response to a block un-selection signal.


Find Patent Forward Citations

Nam, Sang-Wan. (2020). Nonvolatile memory device (U.S. Patent No. 10777233). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10777233

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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