The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Jul. 16, 2018
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;

Inventors:

Can Yuan, Beijing, CN;

Yongqian Li, Beijing, CN;

Zhenfei Cai, Beijing, CN;

Zhidong Yuan, Beijing, CN;

Dongxu Han, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); H01L 51/52 (2006.01); H01L 27/32 (2006.01); G09G 3/20 (2006.01); G09G 3/3258 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 3/20 (2013.01); G09G 3/3258 (2013.01); H01L 27/3248 (2013.01); H01L 51/5203 (2013.01); G09G 2310/0264 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0295 (2013.01); G09G 2320/045 (2013.01);
Abstract

A detection method of a pixel circuit, a driving method of a display panel, a display device and a pixel circuit are provided. The pixel circuit includes a driving transistor, and the detection method includes a writing phase and a reading phase. The writing phase includes: writing a reference data voltage to a gate electrode of the driving transistor, and writing a first detection writing voltage to a first electrode of the driving transistor to turn on the driving transistor; and the reading phase includes: upon the driving transistor being turned off after a first predetermined time after writing the first detection writing voltage, reading a voltage of the first electrode of the driving transistor to obtain a first detection reading voltage for obtaining a threshold voltage of the driving transistor.


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