The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Feb. 04, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Dong Chan Suh, Suwon-si, KR;
Mann-Ho Cho, Seoul, KR;
Woo Bin Song, Hwaseong-si, KR;
Kwang Sik Jeong, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Industry-Academic Cooperation Foundation, Yonsei University, Seodaemun-gu, Seoul, KR;
Abstract
A method for manufacturing a semiconductor device with an improved doping profile is provided. The method includes providing a measuring target including a first region having a plurality of layers, inputting a first input signal into the measuring target and measuring a resulting first output signal, such as a change over time of a first output electric field that is transmitted through or reflected by the first region. Based on a first model including first structural information of a plurality of first modeling layers and information on doping concentrations of each of the plurality of first modeling layers, calculating a second output signal. When a result of comparing the first output signal with the second output signal is smaller than a threshold value, a three-dimensional model of the measuring target may be estimated based on the first model. Such non-destructive measurements may be used to determine manufacturing process parameters corresponding to ideal doping profiles and used to manufacture semiconductor devices implementing such manufacturing process parameters.