The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Jan. 28, 2019
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventors:

Wei Lin, Taipei, TW;

Yu-Cheng Hsu, Yilan County, TW;

Szu-Wei Chen, New Taipei, TW;

Yu-Siang Yang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 7/10 (2006.01); G06F 12/02 (2006.01); G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0688 (2013.01); G06F 12/0238 (2013.01); G06F 13/1668 (2013.01); G11C 7/1096 (2013.01);
Abstract

A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: reading first data from a first memory cell of the rewritable non-volatile memory module by a first read voltage level; decoding the first data by a decoding circuit; reading second data from the first memory cell by a second read voltage level; obtaining reliability information according to a first data status of the first data and a second data status of the second data, and the first data status and the second data status reflect that a first bit value of the first data is different from a second bit value of the second data; and decoding the second data by the decoding circuit according to the reliability information.


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