The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Aug. 31, 2017
Applicant:

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno, 's-Gravenhage, NL;

Inventors:

Hamed Sadeghian Marnani, The Hague, NL;

Maarten Hubertus van Es, Voorschoten, NL;

Rutger Meijer Timmerman Thijssen, Loosdrecht, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01Q 20/00 (2010.01); H01L 21/66 (2006.01); G01N 29/04 (2006.01); G01N 29/06 (2006.01); G01Q 60/32 (2010.01); G01N 29/00 (2006.01);
U.S. Cl.
CPC ...
G01Q 20/00 (2013.01); G01N 29/00 (2013.01); G01N 29/041 (2013.01); G01N 29/0681 (2013.01); G01Q 60/32 (2013.01); H01L 22/12 (2013.01); G01N 2291/0427 (2013.01); G01N 2291/2697 (2013.01);
Abstract

The present document relates to a method of performing defect detection on a self-assembled monolayer of a semiconductor element or semi-manufactured semiconductor element, using an atomic force microscopy system. The system comprises a probe with a probe tip, and is configured for positioning the probe tip relative to the element for enabling contact between the probe tip and a surface of the element. The system comprises a sensor providing an output signal indicative of a position of the probe tip. The method comprises: scanning the surface with the probe tip; applying an acoustic vibration signal to the element; obtaining the output signal indicative of the position of the probe tip; monitoring probe tip motion during said scanning for mapping the surface of the semiconductor element, and using a fraction of the output signal for mapping contact stiffness indicative of a binding strength.


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