The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Jan. 03, 2017
Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Kazuya Hirata, Tokyo, JP;

Assignee:

DISCO CORPROATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 33/04 (2006.01); C30B 29/30 (2006.01); B23K 26/53 (2014.01); C30B 33/06 (2006.01);
U.S. Cl.
CPC ...
C30B 33/04 (2013.01); B23K 26/53 (2015.10); C30B 29/30 (2013.01); C30B 33/06 (2013.01);
Abstract

A wafer production method for producing a wafer from a lithium tantalate ingot includes a step of irradiating, from an end face of a lithium tantalate ingot which is a 42-degree rotation Y cut ingot having an orientation flat formed in parallel to a Y axis, a laser beam of a wavelength having transparency to lithium tantalate with a focal point of the laser beam positioned in the inside of the ingot to form a modified layer in the inside of the ingot while the ingot is fed for processing, and a step of applying external force to the ingot to peel off a plate-shaped material from the ingot to produce a wafer. At the step of forming a modified layer, the ingot is relatively fed for processing in a direction parallel or perpendicular to the orientation flat.


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