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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10774444 B1

PDFFull Text
Date of Patent:
Sep. 15, 2020

Filed:

Dec. 12, 2016

Method for producing sic epitaxial wafer including forming epitaxial layer under different conditions

Applicant:

Showa Denko K.k., Tokyo, JP;

Inventors:

Daisuke Muto, Hikone, JP;

Akira Miyasaka, Chichibu, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Kenneth A Bratland, Jr

Int. Cl.
CPC ...
C30B 25/16 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); C23C 16/32 (2006.01); C23C 16/455 (2006.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C23C 16/325 (2013.01); C23C 16/45523 (2013.01); C30B 25/165 (2013.01); C30B 25/183 (2013.01); C30B 25/20 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01);
Abstract

This method of producing a SiC epitaxial wafer having an epitaxial layer on a SiC single crystal substrate, and includes: when performing crystal growth of the epitaxial layer, a step of forming a part of an epitaxial layer under first conditions at an initial stage where the crystal growth is started; and a step of forming a part of a SiC epitaxial layer under second conditions in which a Cl/Si ratio is decreased and a C/Si ratio is increased in comparison to those in the first conditions, wherein the C/Si ratio is equal to or less than 0.6 and the Cl/Si ratio is equal to or more than 5.0 in the first conditions.

Find Patent Forward Citations

Muto, Daisuke. (2020). Method for producing sic epitaxial wafer including forming epitaxial layer under different conditions (U.S. Patent No. 10774444). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10774444

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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