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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10774371 B1

PDFFull Text
Date of Patent:
Sep. 15, 2020

Filed:

Mar. 06, 2018

Laser line illuminator for high throughput sequencing

Applicant:

Illumina, Inc., San Diego, CA (US);

Inventors:

Yinghua Sun, San Diego, CA (US);

Stanley S. Hong, San Diego, CA (US);

Marco A. Krumbuegel, San Diego, CA (US);

Peter Clarke Newman, San Diego, CA (US);

Simon Prince, San Diego, CA (US);

Dakota Watson, San Diego, CA (US);

Wenyi Feng, San Diego, CA (US);

Andrew James Carson, San Diego, CA (US);

Frederick Erie, San Diego, CA (US);

Assignee:

ILLUMINA, INC., San Diego, CA (US);

Attorney:

Illumina, Inc.

Primary Examiner:

Sang H Nguyen

Int. Cl.
CPC ...
C12Q 1/6809 (2018.01); G01N 21/39 (2006.01); F21V 13/02 (2006.01); F21V 31/04 (2006.01); F21V 19/02 (2006.01); G02B 21/06 (2006.01); G02B 27/09 (2006.01); G01N 21/64 (2006.01); G01N 21/03 (2006.01);
U.S. Cl.
CPC ...
C12Q 1/6809 (2013.01); F21V 13/02 (2013.01); F21V 19/02 (2013.01); F21V 31/04 (2013.01); G01N 21/39 (2013.01); G02B 21/06 (2013.01); G02B 27/0927 (2013.01); G01N 21/0332 (2013.01); G01N 21/6456 (2013.01); G01N 2021/392 (2013.01); G01N 2021/6419 (2013.01); G01N 2021/6478 (2013.01);
Abstract

Imaging systems including an objective lens and a line generation module are described herein. The objective lens may focus a first light beam emitted by the line generation module and a second light beam emitted by the line generation module at a focal point external to a sample so as to adjust line width. Line width may be increased to lower overall power density of a light beam on a surface of the sample such that the power density of the light beam on the surface of the sample is below a photosaturation threshold of a dye on the sample.

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