The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Mar. 27, 2019
Invensense, Inc., San Jose, CA (US);
Daesung Lee, San Jose, CA (US);
Jeff Chunchieh Huang, Fremont, CA (US);
InvenSense, Inc., San Jose, CA (US);
Abstract
An apparatus includes a MEMS wafer with a device layer and a handle substrate bonded to the device layer. The apparatus also includes a CMOS wafer including an oxide layer, and a passivation layer overlying the oxide layer. A bonding electrode overlies the passivation layer and a bump stop electrode overlies the passivation layer. A eutectic bond is between a first bonding metal on the bonding electrode and a second bonding metal on the MEMS wafer. A sensing electrode is positioned adjacent to the bump stop electrode and the bonding electrode. A sensing gap is positioned between the sensing electrode and the device layer, wherein the sensing gap is greater than a bump stop gap positioned between the bump stop electrode and the device layer.