The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Apr. 19, 2017
Applicant:
Alcatel Lucent, Nozay, FR;
Inventors:
Assignee:
Alcatel Lucent, Nozay, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03G 3/30 (2006.01); H03F 1/52 (2006.01); H03F 1/30 (2006.01); H03F 3/19 (2006.01); H03F 3/217 (2006.01);
U.S. Cl.
CPC ...
H03F 1/523 (2013.01); H03F 1/305 (2013.01); H03F 3/19 (2013.01); H03F 3/2171 (2013.01); H03F 2200/15 (2013.01); H03F 2200/18 (2013.01); H03F 2200/27 (2013.01); H03F 2200/451 (2013.01);
Abstract
Embodiments of the present disclosure provide circuitry and a method for a gallium nitride (GaN) device. The circuitry includes a negative bias circuit configured to provide a negative bias voltage for a gate of the GaN device; a drain switch circuit configured to turn on or off a positive voltage for a drain of the GaN device; and a control circuit configured to control the drain switch circuit based on provision of the negative bias voltage, such that the positive voltage for the drain is turned on after a voltage of the gate reaches the negative bias voltage and turned off before the negative bias voltage completely disappears.