The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Apr. 06, 2016
Applicant:

Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;

Inventor:

Kenichi Suzuki, Saitama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/08 (2006.01); H03K 17/082 (2006.01); H03K 17/081 (2006.01); H03K 17/08 (2006.01); H02M 1/32 (2007.01); H02M 1/08 (2006.01); H02H 7/22 (2006.01); H02H 3/05 (2006.01); H03K 17/687 (2006.01); H02M 1/00 (2006.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H02H 3/08 (2013.01); H02H 3/05 (2013.01); H02H 3/085 (2013.01); H02H 7/222 (2013.01); H02M 1/08 (2013.01); H02M 1/32 (2013.01); H03K 17/0822 (2013.01); H03K 17/08104 (2013.01); H03K 17/687 (2013.01); H02M 3/33592 (2013.01); H02M 2001/0009 (2013.01); H02M 2001/327 (2013.01); H03K 2017/0806 (2013.01); H03K 2217/0027 (2013.01); Y02B 70/1475 (2013.01);
Abstract

When a short-circuit failure has occurred in a power semiconductor device provided in a power module, a radical and rapid temperature increase is prevented by instantly interrupting a short-circuit current. A power modulehas a package. Provided in the packageare: a MOSFETserving as the power semiconductor device; a resistorserving as a detecting means for detecting an operation state of the MOSFETand outputting a detection signal; and a MOSFETserving as a current-interrupting purpose switch connected in series to the MOSFET. In response to a control signal Sigenerated on the basis of the detection signal, the MOSFETgoes into a conduction state during a normal operation of the MOSFETand goes into an interruption state so as to interrupt a current flowing in the MOSFETwhen a short-circuit failure has occurred in the MOSFET


Find Patent Forward Citations

Loading…