The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Sep. 20, 2018
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Ulvac Technologies, Inc., Methuen, MA (US);

Inventors:

Gloria Wing Yun Fraczak, Queens, NY (US);

Matthew Brightsky, Pound Ridge, NY (US);

Chung Hon Lam, Yorktown Heights, NY (US);

Fabio Carta, Yorktown Heights, NY (US);

Robert Bruce, White Plains, NY (US);

Takeshi Masuda, Yorktown Heights, NY (US);

Koukou Suu, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/144 (2013.01); H01L 45/06 (2013.01); H01L 45/1253 (2013.01); H01L 45/1286 (2013.01); H01L 45/1683 (2013.01);
Abstract

Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.


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