The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Feb. 21, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventor:

Aakash Pushp, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/00 (2006.01); H01L 29/82 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A device comprising a first magnetic layer (e.g., CoMnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as MnGa, MnGe, etc.) and a second magnetic layer (e.g., CoMnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as MnGa, MnGe, etc.), and a metal halide tunnel barrier in between the first and second magnetic layers, wherein the metal halide tunnel barrier (e.g., NaF, NaCl, NaBr, LiF, LiCl, and LiBr or their combination) is lattice matched within a predetermined limit (e.g. 5%) of both the first and second magnetic layers.


Find Patent Forward Citations

Loading…