The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Dec. 15, 2016
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventor:

Young Hun Han, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); H01L 33/14 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/0025 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01); H01L 33/325 (2013.01); H01L 33/62 (2013.01); H01L 33/0095 (2013.01);
Abstract

One embodiment of a light-emitting element comprises: a substrate; a first-conductive type semiconductor layer disposed on the substrate and including at least one pit; a superlattice layer disposed on the first-conductive type semiconductor layer and including at least one pit; an active layer disposed on the superlattice layer and including at least one pit; an electron blocking layer disposed on the active layer and including at least one pit; a pit layer disposed on the electron blocking layer and including at least one pit; and a second-conductive type semiconductor layer disposed on the pit layer, wherein the pit layer can be doped with Mg at at least a portion thereof.


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