The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Apr. 07, 2017
Applicant:
Stanley Electric Co., Ltd., Tokyo, JP;
Inventor:
Toshiyuki Obata, Yamaguchi, JP;
Assignee:
Stanley Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 33/24 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 33/007 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/0095 (2013.01); H01L 33/145 (2013.01);
Abstract
A semiconductor wafer has, on one surface of a sapphire substrate, an element layer including an n-type layer, an active layer, and a p-type layer, and is characterized in that the surface of the element layer is bent in a convex way, and the curvature thereof is 530-800 km.