The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Mar. 13, 2019
Applicant:

Solaero Technologies Corp., Albuquerque, NM (US);

Inventors:

Daniel Derkacs, Albuquerque, NM (US);

Daniel Aiken, Cedar Crest, NM (US);

Samantha Whipple, Albuquerque, NM (US);

Nathaniel Miller, Albuquerque, NM (US);

Bed Pantha, Chandler, AZ (US);

Mark Stan, Albuquerque, NM (US);

Assignee:

SolAero Technologies Corp., Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0687 (2012.01); H01L 31/0693 (2012.01); H01L 31/0725 (2012.01); H01L 31/054 (2014.01); H01L 31/0735 (2012.01); H01L 31/0304 (2006.01); H01L 31/047 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 31/03046 (2013.01); H01L 31/047 (2014.12); H01L 31/0547 (2014.12); H01L 31/0735 (2013.01);
Abstract

The present disclosure provides a multijunction solar cell comprising: an upper solar subcell having an indirect band gap semiconductor emitter layer composed of greater than 0.7 but less than 1.0 mole fraction aluminum and a base layer, the emitter layer and the base layer forming a heterojunction solar subcell; and a lower solar subcell disposed beneath the upper solar subcell, wherein the lower solar subcell has an emitter layer and a base layer forming a photoelectric junction. In some embodiments, the emitter layer of the upper solar subcell is an n-type AlGaAs layer with 0.7<x<1.0 and having a band gap of greater than 1.85 eV.


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