The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Jul. 22, 2019
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Yusuke Kobayashi, Nagareyama, JP;

Manabu Takei, Shiojiri, JP;

Shinsuke Harada, Tsukuba, JP;

Naoki Kumagai, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7806 (2013.01); H01L 29/41766 (2013.01); H01L 29/42356 (2013.01); H01L 29/47 (2013.01); H01L 29/66068 (2013.01); H01L 29/7812 (2013.01);
Abstract

A first side wall and a second side wall of a trench are each an a-plane having high carrier mobility. Along the first side wall of the trench, a gate insulating film is provided. A gate electrode is provided in the trench, and across the gate insulating film, opposes a portion of a p-type base region between an n-type source region and an n-type current spreading region. Along the second side wall of the trench, a conductive layer is provided. The conductive layer, at the second side wall of the trench, forms Schottky contacts with a p-type contact region, the p-type base region, and the n-type current spreading region. The trench has a bottom corner portion that is at the second side wall and encompassed by a p-type region that is provided in the n-type current spreading region so as to be separated from the p-type base region.


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