The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Oct. 30, 2017
Applicants:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Toru Onishi, Nagoya, JP;

Sachiko Aoi, Nagakute, JP;

Yasushi Urakami, Kariya, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01);
Abstract

In an end portion of a trench, an opening where the end portion of the trench is exposed is formed in a lead-out electrode, a side surface of the trench gate electrode on a top surface side of a semiconductor substrate is spaced from a trench side surface, and a range adjacent to a boundary line positioned between a top surface of the semiconductor substrate and the trench side surface is covered with a laminated insulating film configured such that an interlayer insulating film is laminated on a gate insulating film. This makes it possible to prevent dielectric breakdown of an insulating film.


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