The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Jan. 17, 2019
Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventor:

Toshinori Maruyama, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/07 (2006.01); H01L 29/866 (2006.01); H01L 27/02 (2006.01); H01L 27/095 (2006.01); H01L 29/872 (2006.01); H02K 11/04 (2016.01); H02K 19/36 (2006.01); H02M 1/08 (2006.01); H02K 9/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7808 (2013.01); H01L 27/0255 (2013.01); H01L 27/0727 (2013.01); H01L 27/095 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01); H01L 29/866 (2013.01); H01L 29/872 (2013.01); H02K 11/046 (2013.01); H02K 19/36 (2013.01); H02M 1/08 (2013.01); H02K 9/06 (2013.01);
Abstract

A rectifier has a rectification circuit configured to rectify multi-phase alternating current generated by a rotating electric machine into direct current. The rectifier includes upper-arm semiconductor switching elements included in an upper arm of the rectification circuit, upper-arm protection diodes included in the upper arm and each being electrically connected in parallel with one of the upper-arm semiconductor switching elements, lower-arm semiconductor switching elements included in a lower arm of the rectification circuit, and lower-arm protection diodes included in the lower arm and each being electrically connected in parallel with one of the lower-arm semiconductor switching elements. Each of the upper-arm and lower-arm protection diodes is configured to have, when a reverse voltage higher than a breakdown voltage of the protection diode is applied to the protection diode, an operating resistance that is higher than three times an operating resistance of any of the upper-arm and lower-arm semiconductor switching elements.


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