The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Nov. 14, 2018
Applicant:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Inventor:
Hideaki Tsuchiko, San Jose, CA (US);
Assignee:
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8222 (2006.01); H01L 21/8228 (2006.01); H01L 21/8234 (2006.01); H01L 21/761 (2006.01); H01L 27/06 (2006.01); H01L 27/082 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/735 (2006.01); H01L 29/861 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/761 (2013.01); H01L 21/8222 (2013.01); H01L 21/8228 (2013.01); H01L 21/823481 (2013.01); H01L 21/823493 (2013.01); H01L 27/0623 (2013.01); H01L 27/0629 (2013.01); H01L 27/0635 (2013.01); H01L 27/088 (2013.01); H01L 27/0821 (2013.01); H01L 27/0823 (2013.01); H01L 29/063 (2013.01); H01L 29/10 (2013.01); H01L 29/1079 (2013.01); H01L 29/1083 (2013.01); H01L 29/66272 (2013.01); H01L 29/732 (2013.01); H01L 29/735 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/8611 (2013.01); H01L 29/42368 (2013.01);
Abstract
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations. For example, the semiconductor chip may include a NPN bipolar transistor, PNP bipolar transistor, a diode, an N channel DMOS transistor and the like. the first doped well being configured as a base of the DMOS transistor, a P channel DMOS transistor and the like. These and other embodiments are described in further detail below.