The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

May. 10, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Christoph Andreas Othmar Dirnecker, Eching, DE;

Wolfgang Schwartz, Au, DE;

Doug Weiser, Plano, TX (US);

Joel Martin Halbert, Tucson, AZ (US);

Joseph Anthony DeSantis, Gilroy, CA (US);

Karsten Jens Spinger, Ingolstadt, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 21/3213 (2006.01); H01L 21/027 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 28/24 (2013.01); H01L 21/0273 (2013.01); H01L 21/268 (2013.01); H01L 21/32139 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01);
Abstract

A method of forming an electronic device includes forming an opening through a dielectric layer located over a first resistive layer, the first resistive layer having a first sheet resistance. A second resistive layer is deposited over the dielectric layer and into the opening. The second resistive layer has a second sheet resistance different from the first sheet resistance. A portion of the second resistive layer is removed, thereby forming first and second noncontiguous portions of the second resistive layer, wherein the second portion of the second resistive layer contacts the first resistive layer.


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