The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Mar. 04, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Kojiro Shimizu, Yokkaichi, JP;

Hanae Ishihara, Yokkaichi, JP;

Yumiko Miyano, Shinagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 23/52 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a first contact electrically connected to a first conductive layer with a diameter size smaller than a diameter size of a first support pillar at a region position on an inner side in a radial direction of the first support pillar in a first region and extending to the opposite side of the substrate with respect to the first conductive layer; and a second contact electrically connected to a second conductive layer with a diameter size smaller than a diameter size of a second support pillar at a position of penetrating through the first conductive layer at a region position on an inner side in a radial direction of the second support pillar in the first region and extending to the opposite side of the substrate with respect to the second conductive layer.


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