The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Jan. 25, 2019
Fuji Electric Co., Ltd., Kanagawa, JP;
Soichi Yoshida, Matsumoto, JP;
Hiroshi Miyata, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A semiconductor device including a semiconductor substrate is provided. The semiconductor substrate includes a transistor region, and the transistor region includes a drift region, a plurality of trench portions, a plurality of emitter regions and a plurality of contact regions, and an accumulation region provided between the drift region and the plurality of emitter regions in a depth direction, and having a higher first-conductivity-type doping concentration than the drift region. A first outermost contact region is an outermost one of the plurality of contact regions in a direction parallel to the first direction, and a length of the first outermost contact region in the first direction is longer than a length in the first direction of one contact region of the plurality of contact regions other than the first outermost contact region, and the accumulation region terminates at a position below the first outermost contact region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile