The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Feb. 22, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Byung Ho Kim, Suwon-si, KR;

Jae Hoon Choi, Suwon-si, KR;

Joo Young Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/02 (2013.01); H01L 24/13 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/13024 (2013.01); H01L 2924/35121 (2013.01);
Abstract

A semiconductor package includes a connection member having first and second surfaces opposing each other and including at least one insulating layer and redistribution layer, the redistribution layer including a via penetrating through the insulating layer and a RDL pattern connected to the via while being located on an upper surface of the insulating layer; a semiconductor chip disposed on the first surface and including a connection pad connected to the redistribution layer; and an encapsulant disposed on the first surface and encapsulating the semiconductor chip. The redistribution layer includes a seed layer disposed on a surface of the insulating layer and a plating layer disposed on the seed layer. An interface between the insulating layer and a portion of the seed layer constituting the via includes a first uneven surface with a surface roughness of 30 nm or more.


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