The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Aug. 01, 2018
Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

Abderrezak Marzaki, Aix en Provence, FR;

Christian Rivero, Rousset, FR;

Quentin Hubert, Marseilles, FR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06K 19/073 (2006.01); G06F 21/75 (2013.01); H01L 23/00 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/576 (2013.01); G06F 21/75 (2013.01); G06K 19/07381 (2013.01); H01L 27/0285 (2013.01);
Abstract

An integrated electronic circuit includes a semiconductor substrate with a semiconductor well that is isolated by a buried semiconductor region located under the semiconductor well. A vertical MOS transistor formed in the semiconductor well includes a source-drain region provided by the buried semiconductor region. Backside thinning of the semiconductor substrate is detected by biasing the vertical MOS transistor into an on condition to supply a current and then comparing that current to a threshold. Current less than a threshold is indicative that the semiconductor substrate has been thinned from the backside.


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