The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Mar. 20, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Andrew Tae Kim, Poughkeepsie, NY (US);

Baozhen Li, South Burlington, NY (US);

Ernest Y. Wu, Essex Junction, VT (US);

Chih-Chao Yang, Glenmont, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H01L 27/01 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01L 21/7687 (2013.01); H01L 21/76829 (2013.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 23/5258 (2013.01); H01L 23/53223 (2013.01); H01L 27/016 (2013.01);
Abstract

Back end of the line precision resistors that allow for high currents and for configuration as an eFuse by embedding a single thin film high resistive metal material within a dielectric layer, wherein the resisters are coupled to sidewalls of adjacent metal interconnects are described. The resistors can be formed in the metal one (M1) dielectric layer and can be coupled to sidewalls of the M1 interconnects. Also described are processes for fabricating integrated circuits including the resistors and/or e-Fuses.


Find Patent Forward Citations

Loading…