The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Mar. 27, 2018
Qualcomm Incorporated, San Diego, CA (US);
Plamen Vassilev Kolev, San Diego, CA (US);
Michael Andrew Stuber, Rancho Santa Fe, CA (US);
Lee-Wen Chen, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A transistor may include a semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region. The channel region may have a source interface and a drain interface, and may be bounded by edges extending from the source interface to the drain interface on two boundaries between a field-sensitive semiconductor material and an isolation material. The transistor may further include an insulator layer on the channel region. The transistor may further include a gate on the insulator layer. The gate may have extensions beyond edges of the channel region. The extensions may substantially exceed a minimum specified value.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile