The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Jan. 26, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Takeshi Murakami, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Exposure of a gate conductive film covered by an interlayer insulation film in a unit cell portion is reduced when a gate contact region is formed. A method of manufacturing a semiconductor device includes forming a gate conductive film to come in contact with a gate oxide film in a unit cell portion, forming a gate wire to come in contact with the gate oxide film in a termination region, forming a first insulation film on an upper surface of the gate wire in the termination region, subjecting an upper surface of the gate conductive film in the unit cell portion to thermal oxidation with use of the first insulation film as a mask to form a thermal oxide film on the upper surface of the gate conductive film, and forming a second insulation film covering the first insulation film and the thermal oxide film.