The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
May. 08, 2017
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Jacob Huffman Woodruff, Phoenix, AZ (US);
Bed Sharma, Gilbert, AZ (US);
Assignee:
ASM IP Holdings B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/04 (2013.01); C23C 16/345 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/76834 (2013.01);
Abstract
A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.