The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Nov. 14, 2018
Applicant:
Attopsemi Technology Co., Ltd, Hsinchu, TW;
Inventors:
Shine C. Chung, San Jose, CA (US);
Koji Nii, Tokyo, JP;
Assignees:
Attopsemi Technology Co., LTD, Hsinchu, TW;
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G06F 30/392 (2020.01); G11C 17/18 (2013.01); G06F 30/398 (2020.01);
Abstract
Architecture, design, structure, layout, and method of forming a Programmable Resistive Device (PRD) memory in standard cell library are disclosed. The PRD memory has a plurality of PRD cells. At least one of the PRD cells can have a PRD element coupled to a first supply voltage line and coupled to a second supply voltage line through a program selector. The PRD cells reside in a standard cell library and following most of the standard cell design and layout guidelines.