The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Dec. 19, 2018
Applicant:

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Wuhan, Hubei, CN;

Inventors:

Yuan Tang, San Jose, CA (US);

Zhifeng Mao, Hubei, CN;

Yi Xu, Hubei, CN;

Hung-Yu Chang, San Jose, CA (US);

Jen-Tai Hsu, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 16/26 (2006.01); H02M 3/07 (2006.01); H03K 5/24 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 16/26 (2013.01); H02M 3/07 (2013.01); H03K 5/24 (2013.01); G11C 16/14 (2013.01);
Abstract

A charge pump drive circuit is disclosed. The charge pump drive circuit provides a switch signal to a charge pump which provides a memory with a read voltage and a read current. The charge pump drive circuit includes a read drive circuit and a standby drive circuit. The read drive circuit is powered by a first power supply and provides the charge pump with a switch signal when the memory is in an active reading state. The standby drive circuit is powered by a second power supply and provides the charge pump with a switch signal when the memory is in a read standby state. The first power supply provides a voltage level ranging from 1.6 V to 3.8 V, and the second power supply provides a voltage level of 1.5 V.


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