The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Nov. 09, 2017
Applicant:

Tsinghua University, Beijing, CN;

Inventors:

Zhengming Zhao, Beijing, CN;

Ye Jiang, Beijing, CN;

Tian Tan, Beijing, CN;

Boyang Li, Beijing, CN;

Yatao Ling, Beijing, CN;

Bochen Shi, Beijing, CN;

Liqiang Yuan, Beijing, CN;

Kainan Chen, Beijing, CN;

Assignee:

TSINGHUA UNIVERSITY, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/367 (2020.01); G06F 111/10 (2020.01);
U.S. Cl.
CPC ...
G06F 30/367 (2020.01); G06F 2111/10 (2020.01);
Abstract

An IGBT modeling method includes creating piece-wise line functions describing a collector-emitter voltage v, a collector current iand a gate-emitter voltage vof the IGBT during a switching-on transient based on an internal structure of the IGBT and transient processes of the IGBT. The IGBT modeling method further includes creating piece-wise line functions describing the collector-emitter voltage v, the collector current iand the gate-emitter voltage vof the IGBT during a switching-off transient based on the internal structure of the IGBT and the transient processes.


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